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PA1814 Hoja de datos - Renesas Electronics

PA1814 image

Número de pieza
PA1814

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page
10 Pages

File Size
172.8 kB

Fabricante
Renesas
Renesas Electronics Renesas

DESCRIPTION
The µPA1814 is a switching device which can be driven directly by a 4 V power source.
The µPA1814 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.


FEATURES
• Can be driven by a 4 V power source
• Low on-state resistance
   RDS(on)1 = 16 mΩ MAX. (VGS = –10 V, ID = –3.5 A)
   RDS(on)2 = 24 mΩ MAX. (VGS = –4.5 V, ID = –3.5 A)
   RDS(on)3 = 27 mΩ MAX. (VGS = –4.0 V, ID = –3.5 A)
• Built-in G-S protection diode against ESD


Número de pieza
componentes Descripción
PDF
Fabricante
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Ver
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Ver
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Ver
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Ver
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Ver
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Ver
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Ver
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Ver
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Ver
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Ver
NEC => Renesas Technology

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