RD00HHS1(2010) Hoja de datos - MITSUBISHI ELECTRIC
Número de pieza
RD00HHS1
componentes Descripción
Other PDF
PDF
page
7 Pages
File Size
117.9 kB
Fabricante
MITSUBISHI ELECTRIC
DESCRIPTION
RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.
FEATURES
High power gain
Pout>0.3W, Gp>19dB @Vdd=12.5V,f=30MHz
APPLICATION
For output stage of high power amplifiers in HF Band mobile radio sets.
Número de pieza
componentes Descripción
PDF
Fabricante
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