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RD06HHF1(2010) Hoja de datos - MITSUBISHI ELECTRIC

RD06HHF1 image

Número de pieza
RD06HHF1

Other PDF
  2004   2008   lastest PDF  

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page
9 Pages

File Size
257.3 kB

Fabricante
Mitsubishi
MITSUBISHI ELECTRIC  Mitsubishi

DESCRIPTION
RD06HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.


FEATURES
   High power gain:
      Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz


APPLICATION
   For output stage of high power amplifiers in HF band mobile radio sets.


Número de pieza
componentes Descripción
PDF
Fabricante
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W ( Rev : 2006 )
Ver
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W
Ver
Quanzhou Jinmei Electronic
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W ( Rev : 2010 )
Ver
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W
Ver
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W ( Rev : 2010 )
Ver
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W
Ver
Quanzhou Jinmei Electronic
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W ( Rev : 2008 )
Ver
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W
Ver
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W ( Rev : 2010 )
Ver
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W ( Rev : 2006 )
Ver
MITSUBISHI ELECTRIC

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