RD16HHF1 Hoja de datos - Quanzhou Jinmei Electronic
Número de pieza
RD16HHF1
componentes Descripción
Other PDF
no available.
PDF
page
8 Pages
File Size
267.8 kB
Fabricante
Quanzhou Jinmei Electronic
DESCRIPTION
RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.
FEATURES
High power gain:
Pout>16W, Gp>16dB @Vdd=12.5V,f=30MHz
APPLICATION
For output stage of high power amplifiers in HF band mobile radio sets.
Número de pieza
componentes Descripción
PDF
Fabricante
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