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RD00HVS1 Hoja de datos - Quanzhou Jinmei Electronic

RD00HVS1 image

Número de pieza
RD00HVS1

Other PDF
  no available.

PDF
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page
6 Pages

File Size
151 kB

Fabricante
JMNIC
Quanzhou Jinmei Electronic JMNIC

DESCRIPTION
RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


FEATURES
   High power gain
      Pout>0.5W, Gp>20dB @Vdd=12.5V,f=175MHz


APPLICATION
For output stage of high power amplifiers in VHF/UHF Band mobile radio sets.


Número de pieza
componentes Descripción
PDF
Fabricante
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W ( Rev : 2006 )
Ver
Mitsumi
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W ( Rev : 2010 )
Ver
Mitsumi
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
Ver
Mitsumi
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W
Ver
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W ( Rev : 2006 )
Ver
Mitsumi
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W ( Rev : 2006 )
Ver
Mitsumi
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
Ver
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W ( Rev : 2010 )
Ver
Mitsumi
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W ( Rev : 2010 )
Ver
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W ( Rev : 2010 )
Ver
MITSUBISHI ELECTRIC

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