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SST28SF040A(2003) Hoja de datos - Silicon Storage Technology

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Número de pieza
SST28SF040A

componentes Descripción

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26 Pages

File Size
317 kB

Fabricante
SST
Silicon Storage Technology SST

PRODUCT DESCRIPTION
The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternative approaches. The SST28SF/VF040A erase and program with a single power supply. The SST28SF/VF040A conform to JEDEC standard pinouts for byte wide memories and are compatible with existing industry standard flash EEPROM pinouts.
Featuring high performance programming, the SST28SF/VF040A typically Byte-Program in 35 µs. The SST28SF/VF040A typically Sector-Erase in 2 ms. Both Program and Erase times can be optimized using interface features such as Toggle bit or Data# Polling to indicate the completion of the Write cycle. To protect against an inadvertent write, the SST28SF/VF040A have on chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, the SST28SF/VF040A are offered with a guaranteed sector endurance of 10,000 cycles. Data retention is rated greater than 100 years.


FEATURES:
• Single Voltage Read and Write Operations
   – 4.5-5.5V-only for SST28SF040A
   – 2.7-3.6V for SST28VF040A
• Superior Reliability
   – Endurance: 100,000 Cycles (typical)
   – Greater than 100 years Data Retention
• Memory Organization: 512K x8
• Sector-Erase Capability: 256 Bytes per Sector
• Low Power Consumption
   – Active Current: 15 mA (typical) for 5.0V and
      10 mA (typical) for 2.7-3.6V
   – Standby Current: 5 µA (typical)
• Fast Sector-Erase/Byte-Program Operation
   – Byte-Program Time: 35 µs (typical)
   – Sector-Erase Time: 2 ms (typical)
   – Complete Memory Rewrite: 20 sec (typical)
      Byte-Program, Small Erase Sector flash memorie
• Fast Read Access Time
   – 4.5-5.5V-only operation: 90 and 120 ns
   – 2.7-3.6V operation: 150 and 200 ns
• Latched Address and Data
• Hardware and Software Data Protection
   – 7-Read-Cycle-Sequence Software Data
      Protection
• End-of-Write Detection
   – Toggle Bit
   – Data# Polling
• TTL I/O Compatibility
• JEDEC Standard
   – Flash EEPROM Pinouts
• Packages Available
   – 32-lead PLCC
   – 32-lead TSOP (8mm x 20mm)
   – 32-pin PDIP

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