DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for DC/DC Converters and power management application of notebook computers.
FEATURES
• Super low on-state resistance
RDS(on)1 = 19.0 mΩ TYP. (VGS = 10 V, ID = 4.0 A)
RDS(on)2 = 30.0 mΩ TYP. (VGS = 4.5 V, ID = 4.0 A)
• Low Ciss : Ciss = 750 pF TYP.
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)