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VNS3NV04D-E Hoja de datos - STMicroelectronics

VNS3NV04D-E image

Número de pieza
VNS3NV04D-E

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page
21 Pages

File Size
304.8 kB

Fabricante
ST-Microelectronics
STMicroelectronics ST-Microelectronics

Description
The VNS3NV04D-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETs from DC up to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protects the chip in harsh environments.
Fault feedback can be detected by monitoring the voltage at the input pin.


FEATUREs
■ Linear current limitation
■ Thermal shut down
■ Short circuit protection
■ Integrated clamp
■ Low current drawn from input pin
■ Diagnostic feedback through input pin
■ Esd protection
■ Direct access to the gate of the power mosfet
   (analog driving)
■ Compatible with standard power mosfet

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Número de pieza
componentes Descripción
PDF
Fabricante
OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
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“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET ( Rev : 2013 )
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“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET ( Rev : 2004 )
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OMNIFET II fully autoprotected Power MOSFET ( Rev : 2008 )
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OMNIFET II fully autoprotected Power MOSFET
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“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET ( Rev : 2003 )
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“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
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