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T224162B

256K x 16 DYNAMIC RAM EDO PAGE MODE

Taiwan Memory Technology 

tm TE

CH

T224162B

ABSOLUTE MAXIMUM RATINGS*

Voltage on Any pin Relative to VSS..... -1V to +7V

Operating Temperature, Ta (ambient) ..0°C to +70°C

Storage Temperature (plastic)........ -55°C to +150°C

Power Dissipation ............................…...........

1.0W

*Stresses greater than those listed under "Absolute

Maximum Ratings" may cause permanent damage to

the device. This is a stress rating only and functional

operation of the device at these or any other

conditions above those indicated in the operational

sections of this specification is not implied. Exposure

to absolute maximum rating conditions for extended

Short Circuit Output Current.......…............... 50mA periods

may

affect

reliability.

DC ELECTRICAL CHARACTERISTICS AND RECOMMENDED

OPERATING CONDITIONS

(0°C ≤ Ta ≤ 70°C; VCC = 5V ± 10 % unless otherwise noted)

DESCRIPTION

CONDITIONS

Supply Voltage

Supply Voltage

Input High (Logic) voltage

Input Low (Logic) voltage

Input Leakage Current

Output Leakage Current

0V ≤ VIN ≤ 7V

0V ≤ VOUT≤ 7V

Output(s) disabled

Output High Voltage

Output Low Voltage

IOH = -5 mA

IOL = 4.2 mA

SYM.

Vcc

Vss

VIH

VIL

ILI

ILO

VOH

VOL

MIN

4.5

0

2.4

-1.0

-10

-10

2.4

0

MAX

5.5

0

Vcc+1

0.8

10

10

Vcc

0.4

UNITS

V

V

V

V

uA

NOTES

1

1

1

uA

V

V

Note: 1.All Voltages referenced to Vss

MAX

DESCRIPTION

Operating Current

CONDITIONS

SYM. -22 -25 -28 -35 -45 -50UNITSNOTES

RAS ,CAS cycling , tRC = min Icc1 190 180 170 150 130 110 mA 1,2

Standby Current

TTL interface, RAS ,

4 4 4 4 4 4 mA

CAS =VIH, DOUT=High-Z Icc2

CMOS interface, RAS , CAS >

2 2 2 2 2 2 mA

Vcc-0.2V

RAS -only refresh

Current

tRC = min

Icc3 190 180 170 150 130 110 mA 2

Standby Current

RAS =VIH, CAS =VIL

CAS Before RAS

Refresh Current

tRC = min

EDO Page Mode Current tPC = min

Icc5 5 5 5 5 5 5 mA 1

Icc6 190 180 170 150 130 110 mA

Icc7 190 180 170 150 130 110 mA 1,3

Note: 1. Icc depends on output load condition when the device is selected.

Icc max is specified at the output open condition.

2. Address can be changed twice or less while RAS = VIL.

3. Address can be changed once or less while CAS = VIH.

Taiwan Memory Technology, Inc. reserves the right P. 3

to change products or specifications without notice.

Publication Date: AUG. 2000

Revision:L

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