T224162B Ver la hoja de datos (PDF) - Taiwan Memory Technology
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T224162B Datasheet PDF : 14 Pages
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T224162B
AC ELECTRICAL CHARACTERISTICS (continued)
AC CHARACTERISTICS SYM
PARAMETER
Row Address Setup Time tASR
Row Address Hold Time tRAH
RAS to Column Address
Delay Time
tRAD
-2 2
-2 5
-2 8
MIN MAX MIN MAX MIN MAX
0
0
0
5
5
5
8 11 8 12 8 13
-3 5
-4 5
- 50
UNIT Notes
MIN MAX MIN MAX MIN MAX
0
0
0
ns
5
5
5
ns
8
8 20 8 26 10 29 ns
Column Address Setup Time tASC 0
0
0
0
0
0
ns 18
Column Address Hold Time tCAH 4
4
4
4
6
7
ns 18
Column Address Hold Time
(Reference to RAS )
tAR 17
19
21
30
40
45
ns
Column Address to RAS
Lead Time
tRAL 11
12
13
15
19
23
ns
Read Command Setup Time tRCS 0
0
0
0
0
0
ns 15,18
Read Command Hold Time
9,15,
Reference to CAS
tRCH 0
0
0
0
0
0
ns 19
Read Command Hold Time
9
Reference to RAS
tRRH 0
0
0
0
0
0
ns
CAS to Output in Low-Z tCLZ 3
3
3
3
3
3
ns 20
Output Buffer Turn-off
10,17,
Delay From CAS or RAS tOFF1 3
3
3
3 15 3 15 3 15 ns 20
Output Buffer Turn-off to
17,28
OE
tOFF2
8
8
8
8
8
8 ns
Write Command Setup Time tWCS 0
0
0
0
0
0
ns 11,15,
18
Write Command Hold Time tWCH 4
4
4
4
6
7
ns 15,27
Write Command Hold Time
15
(Reference to RAS )
tWCR 19
19
21
30
46
51
ns
Write Command Pulse
Width
tWP 4
4
4
4
6
8
ns 15
Write Command to RAS
Lead Time
tRWL 6
6
6
7
15
9
10
ns
Write Command to CAS
Lead Time
tCW L 5
5
5
7
15,19
9
11
ns
Data-in Setup Time
tDS
0
0
0
0
0
0
ns 12,20
Data-in Hold Time
tDH 4
4
4
4
6
7
ns 12,20
Data-in Hold Time
(Reference to RAS )
tDHR 19
19
21
30
40
45
ns
RAS to WE Delay Time tRWD 31
34
37
51
61
70
ns 11
AC ELECTRICAL CHARACTERISTICS (continued)
Taiwan Memory Technology, Inc. reserves the right P. 5
to change products or specifications without notice.
Publication Date:AUG. 2000
Revision:L
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