T224162B Ver la hoja de datos (PDF) - Taiwan Memory Technology

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T224162B

256K x 16 DYNAMIC RAM EDO PAGE MODE

Taiwan Memory Technology 

tm TE

CH

RAS VVIIHL

CA S L , CA S H VVIIHL

ADDR VVIIHL

WE VVIIHL

I/O VVOOHL

OE VVIIHL

READ CYCLE

t RC

tR A S

tR P

tCRP

tR C D

tC S H

tR SH

tC A S

tC L C H

tR R H

tA S R

tR A D

tRAH

ROW

tAR

t AS C

tR A L

tC A H

C OLU MN

t RC S

tR C H

O P EN

tA A

tR A C

tC A C

tC L Z

tO A C

NO TE 1

tOFF 1

V A L ID D A T A

tOFF 2

T224162B

ROW

OP EN

EARLY WRITE CYCLE

RAS VVIIHL

CA S L ,C AS H VVIIHL

A DDR VVIIHL

tC R P

tA S R

t R AD

tRAH

RO W

WE VVIIHL

I/O VVIIOOHL

OE VVIIHL

tR C

tR A S

tR P

tR C D

tC S H

tR SH

tC A S

tC L C H

tAR

t AS C

tR A L

tC A H

C OLU MN

tC WL

tR WL

tWC R

tWC S

tWC H

tWP

tD H R

tD S

tD H

V A L ID D A T A

ROW

DON'T CARE

UNDEFINED

Note: 1. tOFF1 is referenced from the rising edge of RAS or CAS , whichever occurs last.

Taiwan Memory Technology, Inc. reserves the right P. 8

to change products or specifications without notice.

Publication Date: AUG. 2000

Revision:L

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