T224162B Ver la hoja de datos (PDF) - Taiwan Memory Technology

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T224162B

256K x 16 DYNAMIC RAM EDO PAGE MODE

Taiwan Memory Technology 

tm TE

CH

T224162B

RAS VVIIHL

CA S L ,C AS H VVIIHL

A DDR VVIIHL

WE VVIIHL

I /O

VIOH

V I OL

OE

VIH

VIL

READ WRITE CYCLE

(LATE WRITE and READ-MODIFY-WRITE CYCLES)

tR WC

tR A S

tR P

tC R P

tR CD

tC S H

tR SH

tC A S

tCLCH

tA SR

tA R

tR A D

tR A H

ROW

t AS C

tR A L

tC A H

C OLUM N

t RC S

tR WD

tC WD

tA WD

tC WL

tR WL

tWP

RO W

OP EN

t CL Z

tA A

tR A C

tC A C

tD S t DH

tOA C

VA L ID DO U T V A L ID D IN

tO F F 2

tOE H

OPE N

RAS VVIIHL

CA S L, CA S H VVIIHL

ADDR VVIIHL

WE VVIIHL

I /O

VOH

VOL

OE VVIIHL

EDO-PAGE-MODE READ CYCLE

t R A SC

tR P

t CR P

tC S H

t RC D

tC A S ,tC L C H

tP C ( NO TE 2 )

tC P

tC AS ,tC L C H

t CP

tR S H

tC AS ,tC L C H

tC P N

tA S R

tR AD

tR A H

RO W

tAR

tAS C

tC A H

C OLUMN

t RC S

tAS C

tC A H

C O L U MN

tA S C

tC A H

tR AL

C OLUMN

tR C H

ROW

t R RH

tCLZ

OP EN

t AA

tR A C

tC A C

tO A C

tO E S

tC O H

V A L ID

DA TA

tA A

tA C P

tC AC

tC L Z

t AA

tAC P

tC A C

V A L ID

D AT A

tO E H C

tO FF 2

tO A C

tO E S

tOEP

N O TE1

tO F F 1

V A L ID

DA TA

tO F F 2

OP EN

DON'T CARE

UNDEF INED

Note: 1. tOFF1 is referenced from the rising edge of RAS or CAS , whichever occurs last.

2. tPC can be measured from falling edge of CAS to falling edge of CAS , or from rising edge of

CAS to rising edge of RAS . Both measurements must meet the tPC specification.

Taiwan Memory Technology, Inc. reserves the right P. 9

to change products or specifications without notice.

Publication Date: AUG. 2000

Revision:L

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