T224162B Ver la hoja de datos (PDF) - Taiwan Memory Technology
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T224162B Datasheet PDF : 14 Pages
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tm TE
CH
T224162B
CAPACITANCE
(Ta =25°C, Vcc =5V ±10 %)
Parameter
Symbol
Typ
Max
Unit
Input Capacitance (address)
CI1
-
Input Capacitance (clocks)
CI2
-
Output Capacitance (data-in, data-out)
CI/O
-
5
pF
7
pF
10
pF
Note: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
Notes
1
1
1
AC ELECTRICAL CHARACTERISTICS (note 14)
(Ta =0 to 70°C, Vcc=5V ± 10 %, Vss=0V)
Test Conditions (note 29)
Input timing reference levels: 0.8V, 2.4V
Output Load: 2TTL gate + CL (50pF)
AC CHARACTERISTICS SYM -22
-2 5
-2 8
-3 5
-4 5
-5 0
UNIT Notes
PARAMETER
MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX
Read or Write Cycle Time tRC 42
45
48
65
85
100
ns
Read Write Cycle Time tRWC 62
65
70
95
115
135
ns
EDO-Page-Mode Read or
Write Cycle Time
tPC 8
10
10
12
16
20
ns 22
EDO-Page-Mode Read-
Write Cycle Time
tPCM 30
32
34
40
46
57
ns 22
Access Time From RAS tRAC
22
25
28
35
45
50 ns 4
Access Time From CAS tCAC
7
7
7
9
11
13 ns 5,20
Access Time From OE tOAC
8
8
8
9
11
13 ns 13,20
Access Time From Column
Address
tAA
11
12
13
15
19
23 ns
Access Time From CAS
Precharge
tACP
13
14
15
18
22
26 ns 20
RAS Pulse Width
tRAS 22 10K 25 10K 28 10K 35 10K 45 10K 50 10K ns
RAS Pulse Width
(EDO Page Mode)
tRASC 22 100K 25 100K 28 100K 35 100K 45 100K 50 100K ns
RAS Hold Time
RAS Precharge Time
CAS Pulse Width
CAS Hold Time
tRSH 7
7
7
9
11
13
ns 27
tRP 15
15
17
25
35
37
ns
tCAS 4 10K 4 10K 4 10K 4 10K 6 10K 8 10K ns 26
tCSH 19
20
22
30
40
50
ns 19
CAS Precharge Time
(EDO Page Mode)
tCP 3
3
3
3
5
6
ns 23
RAS to CAS Delay Time tRCD 9 15 10 17 10 19 10 26 10 34 19 37 ns 7,18
CAS to RAS Precharge
Time
tCRP
3
3
3
3
5
5
ns 19
Taiwan Memory Technology, Inc. reserves the right P. 4
to change products or specifications without notice.
Publication Date:AUG. 2000
Revision:L
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