IKW20N60H3 Ver la hoja de datos (PDF) - Infineon Technologies

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IKW20N60H3

IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode

Infineon Technologies 

IKW20N60H3

Highspeedswitchingseriesthirdgeneration

3.0

Eoff

Eon

Ets

2.5

2.0

2.00

Eoff

Eon

1.75

Ets

1.50

1.25

1.5

1.00

0.75

1.0

0.50

0.5

0.25

0.0

4

8 12 16 20 24 28 32 36 40

IC,COLLECTORCURRENT[A]

Figure 13. Typicalswitchingenergylossesasa

functionofcollectorcurrent

(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,

rG=14,6Ω,testcircuitinFig.E)

0.00

5

10 15 20 25 30 35 40 45 50

rG,GATERESISTOR[Ω]

Figure 14. Typicalswitchingenergylossesasa

functionofgateresistor

(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,

IC=20A,testcircuitinFig.E)

1.25

Eoff

Eon

Ets

1.00

1.50

Eoff

Eon

Ets

1.25

1.00

0.75

0.75

0.50

0.50

0.25

0.25

0.00

0

25 50 75 100 125 150 175

Tj,JUNCTIONTEMPERATURE[°C]

0.00

200

250

300

350

400

450

VCE,COLLECTOR-EMITTERVOLTAGE[V]

Figure 15. Typicalswitchingenergylossesasa

functionofjunctiontemperature

(indload,VCE=400V,VGE=15/0V,IC=20A,

rG=14,6Ω,testcircuitinFig.E)

Figure 16. Typicalswitchingenergylossesasa

functionofcollectoremittervoltage

(ind.load,Tj=175°C,VGE=15/0V,IC=20A,

rG=14,6Ω,testcircuitinFig.E)

10

Rev.2.2,2014-03-12

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