IKW20N60H3 Ver la hoja de datos (PDF) - Infineon Technologies

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IKW20N60H3

IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode

Infineon Technologies 

IKW20N60H3

Highspeedswitchingseriesthirdgeneration

HighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fast

recoveryanti-paralleldiode



Features:

C

TRENCHSTOPTMtechnologyoffering

•verylowVCEsat

•lowEMI

•Verysoft,fastrecoveryanti-paralleldiode

•maximumjunctiontemperature175°C

•qualifiedaccordingtoJEDECfortargetapplications

•Pb-freeleadplating;RoHScompliant

•completeproductspectrumandPSpiceModels:

http://www.infineon.com/igbt/

G

E

Applications:

•uninterruptiblepowersupplies

•weldingconverters

•converterswithhighswitchingfrequency

G

C

E

KeyPerformanceandPackageParameters

Type

VCE

IC

VCEsat,Tvj=25°C

IKW20N60H3

600V 20A

1.95V

Tvjmax

175°C

Marking

K20H603

Package

PG-TO247-3

2

Rev.2.2,2014-03-12

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