IKW20N60H3 Ver la hoja de datos (PDF) - Infineon Technologies

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IKW20N60H3

IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode

Infineon Technologies 

IKW20N60H3

Highspeedswitchingseriesthirdgeneration

Maximumratings

Parameter

Collector-emittervoltage,Tvj≥25°C

DCcollectorcurrent,limitedbyTvjmax

TC=25°C

TC=100°C

Pulsedcollectorcurrent,tplimitedbyTvjmax

Turn off safe operating area

VCE≤600V,Tvj≤175°C,tp=1µs

Diodeforwardcurrent,limitedbyTvjmax

TC=25°C

TC=100°C

Diodepulsedcurrent,tplimitedbyTvjmax

Gate-emitter voltage

Short circuit withstand time

VGE=15.0V,VCC≤400V

Allowed number of short circuits < 1000

Time between short circuits: ≥ 1.0s

Tvj=150°C

PowerdissipationTC=25°C

PowerdissipationTC=100°C

Operating junction temperature

Storage temperature

Soldering temperature,

wave soldering 1.6 mm (0.063 in.) from case for 10s

Mounting torque, M3 screw

Maximum of mounting processes: 3

Symbol

VCE

IC

ICpuls

-

IF

IFpuls

VGE

tSC

Ptot

Tvj

Tstg

M

Value

Unit

600

V

40.0

A

20.0

80.0

A

80.0

A

20.0

A

10.0

80.0

A

±20

V

µs

5

170.0

85.0

W

-40...+175

°C

-55...+150

°C

260

°C

0.6

Nm

ThermalResistance

Parameter

Characteristic

IGBT thermal resistance,

junction - case

Diode thermal resistance,

junction - case

Thermal resistance

junction - ambient

Symbol Conditions

Rth(j-c)

Rth(j-c)

Rth(j-a)

Max.Value

Unit

0.88

K/W

1.89

K/W

40

K/W

4

Rev.2.2,2014-03-12

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