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IKW20N60H3

IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode

Infineon Technologies 

IKW20N60H3

Highspeedswitchingseriesthirdgeneration

SwitchingCharacteristic,InductiveLoad

Parameter

Symbol Conditions

IGBTCharacteristic,atTvj=25°C

Turn-on delay time

td(on)

Rise time

tr

Turn-off delay time

td(off)

Fall time

tf

Turn-on energy

Eon

Turn-off energy

Eoff

Total switching energy

Ets

Diode reverse recovery time

trr

Diode reverse recovery charge

Qrr

Diode peak reverse recovery current Irrm

Diode peak rate of fall of reverse

recoverycurrentduringtb

dirr/dt

Tvj=25°C,

VCC=400V,IC=20.0A,

VGE=0.0/15.0V,

rG=14.6Ω,Lσ=75nH,

Cσ=30pF

Lσ,CσfromFig.E

Energy losses include “tail” and

diode reverse recovery.

Tvj=25°C,

VR=400V,

IF=10.0A,

diF/dt=1000A/µs

Value

Unit

min. typ. max.

-

17

- ns

-

23

- ns

- 194 - ns

-

11

- ns

- 0.56 - mJ

- 0.24 - mJ

- 0.80 - mJ

- 112 - ns

- 0.39 - µC

- 11.0 - A

- -750 - A/µs

SwitchingCharacteristic,InductiveLoad

Parameter

Symbol Conditions

IGBTCharacteristic,atTvj=175°C

Turn-on delay time

td(on)

Rise time

tr

Turn-off delay time

td(off)

Fall time

tf

Turn-on energy

Eon

Turn-off energy

Eoff

Total switching energy

Ets

Diode reverse recovery time

trr

Diode reverse recovery charge

Qrr

Diode peak reverse recovery current Irrm

Diode peak rate of fall of reverse

recoverycurrentduringtb

dirr/dt

Tvj=175°C,

VCC=400V,IC=20.0A,

VGE=0.0/15.0V,

rG=14.6Ω,Lσ=75nH,

Cσ=30pF

Lσ,CσfromFig.E

Energy losses include “tail” and

diode reverse recovery.

Tvj=175°C,

VR=400V,

IF=10.0A,

diF/dt=1000A/µs

Value

Unit

min. typ. max.

-

16

- ns

-

21

- ns

- 227 - ns

-

14

- ns

- 0.71 - mJ

- 0.36 - mJ

- 1.07 - mJ

- 191 - ns

- 0.91 - µC

- 14.2 - A

- -500 - A/µs

6

Rev.2.2,2014-03-12

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