IKW20N60H3 Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Lista de partido

IKW20N60H3

IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode

Infineon Technologies 

IKW20N60H3

Highspeedswitchingseriesthirdgeneration

100

10

td(off)

tf

td(on)

tr

1000

td(off)

tf

td(on)

tr

100

1

4 8 12 16 20 24 28 32 36 40

IC,COLLECTORCURRENT[A]

Figure 9. Typicalswitchingtimesasafunctionof

collectorcurrent

(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,

rG=14,6Ω,testcircuitinFig.E)

10

5

10 15 20 25 30 35 40 45 50

rG,GATERESISTOR[Ω]

Figure 10. Typicalswitchingtimesasafunctionofgate

resistor

(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,

IC=20A,testcircuitinFig.E)

100

td(off)

tf

td(on)

tr

6

typ.

min.

max.

5

4

10

3

1

0 25 50 75 100 125 150 175

Tj,JUNCTIONTEMPERATURE[°C]

2

0

25 50 75 100 125 150 175

Tj,JUNCTIONTEMPERATURE[°C]

Figure 11. Typicalswitchingtimesasafunctionof

junctiontemperature

(ind.load,VCE=400V,VGE=15/0V,IC=20A,

rG=14,6Ω,testcircuitinFig.E)

Figure 12. Gate-emitterthresholdvoltageasafunction

ofjunctiontemperature

(IC=0.29mA)

9

Rev.2.2,2014-03-12

Share Link: