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IKW30N60T
(Rev.:2015)

Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

Infineon Technologies 

IKW30N60T

TRENCHSTOP™ Series

q

Switching Characteristic, Inductive Load, at Tj=25 C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

Anti-Parallel Diode Characteristic

Diode reverse recovery time

Diode reverse recovery charge

Diode peak reverse recovery current

Diode peak rate of fall of reverse

recovery current during tb

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

trr

Qrr

Irrm

dirr/dt

Tj=25C,

VCC=400V,IC=30A,

VGE=0/15V,

rG=10.6,

L=136nH,C=39pF

L, C from Fig. E

Energy losses include

“tail” and diode reverse

recovery.

Tj=25C,

VR=400V, IF=30A,

diF/dt=910A/s

min.

-

-

-

-

-

-

-

-

-

-

-

Value

Typ.

23

21

254

46

0.69

0.77

1.46

143

0.92

16.3

603

Unit

max.

- ns

-

-

-

- mJ

-

-

- ns

- µC

-A

- A/s

Switching Characteristic, Inductive Load, at Tj=175 C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

Anti-Parallel Diode Characteristic

Diode reverse recovery time

Diode reverse recovery charge

Diode peak reverse recovery current

Diode peak rate of fall of reverse

recovery current during tb

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

trr

Qrr

Irrm

dirr/dt

Tj=175C,

VCC=400V,IC=30A,

VGE=0/15V,

rG=10.6,

L=136nH,C=39pF

L, C from Fig. E

Energy losses include

“tail” and diode reverse

recovery.

Tj=175C

VR=400V, IF=30A,

diF/dt=910A/s

min.

-

-

-

-

-

-

-

-

-

-

-

Value

Typ.

24

26

292

90

1.0

1.1

2.1

225

2.39

22.3

310

Unit

max.

- ns

-

-

-

- mJ

-

-

- ns

- µC

-A

- A/s

IFAG IPC TD VLS

3

Rev. 2.6 19.05.2015

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