IKW30N60T(2015) Ver la hoja de datos (PDF) - Infineon Technologies

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IKW30N60T
(Rev.:2015)

Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

Infineon Technologies 

IKW30N60T

TRENCHSTOP™ Series

q

D=0.5

0.2

10-1K/W 0.1

0.05

0.02

R,(K/W)

0.29566

0.25779

0.19382

0.05279

R1

, (s)

6.478*10-2

6.12*10-3

4.679*10-4

6.45*10-5

R2

1 0 -2K /W

0.01

C1=1/R1 C2=2/R2

single pulse

1µs 10µs 100µs 1ms 10ms 100ms

tP, PULSE WIDTH

Figure 21. IGBT transient thermal

impedance

(D = tp / T)

100K/W

D=0.5

0.2

0.1

1 0 -1K /W

R,(K/W)

0.19517

0.26773

0.31252

0.05 0.22545

0.04916

0.02 R1

, (s)

1.079*10-1

1.546*10-2

2.297*10-3

2.234*10-4

7.5*10-6

R2

6.53*10-2

0.01

C1=1/R1 C2=2/R2

1 0 -2K /W

single pulse

100ns 1µs 10µs 100µs 1ms 10ms100ms

tP, PULSE WIDTH

Figure 22. Diode transient thermal

impedance as a function of pulse

width

(D=tP/T)

250ns

200ns

TJ=175°C

150ns

100ns

50ns

TJ=25°C

0ns

700A/µs 800A/µs 900A/µs 1000A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 23. Typical reverse recovery time as

a function of diode current slope

(VR=400V, IF=30A,

Dynamic test circuit in Figure E)

2.0µC

TJ=175°C

1.5µC

1.0µC

0.5µC

T =25°C

J

0.0µC

700A/µs 800A/µs 900A/µs 1000A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 24. Typical reverse recovery charge

as a function of diode current

slope

(VR = 400V, IF = 30A,

Dynamic test circuit in Figure E)

IFAG IPC TD VLS

9

Rev. 2.6 19.05.2015

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