IKW30N60T(2015) Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Lista de partido

IKW30N60T
(Rev.:2015)

Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

Infineon Technologies 

IKW30N60T

TRENCHSTOP™ Series

q

5.0mJ

*) Eon and Ets include losses

due to diode recovery

4.0mJ

Ets*

*) Eon and Ets include losses

due to diode recovery

Ets*

3 .0 m J

3.0mJ

E

off

2 .0 m J

2.0mJ

Eoff

1.0mJ

0.0mJ

0A

Eon*

10A 20A 30A 40A 50A

IC, COLLECTOR CURRENT

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, TJ = 175°C,

VCE = 400V, VGE = 0/15V, rG = 10Ω,

Dynamic test circuit in Figure E)

1 .0 m J

Eon*

0 .0 m J











RG, GATE RESISTOR

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, TJ = 175°C,

VCE = 400V, VGE = 0/15V, IC = 30A,

Dynamic test circuit in Figure E)

2.0mJ

*) Eon and Ets include losses

due to diode recovery

Ets*

1.5mJ

1.0mJ

Eoff

0.5mJ Eon*

0.0mJ

25°C 50°C 75°C 100°C 125°C 150°C

TJ, JUNCTION TEMPERATURE

Figure 15. Typical switching energy losses

as a function of junction

temperature

(inductive load, VCE = 400V,

VGE = 0/15V, IC = 30A, rG = 10Ω,

Dynamic test circuit in Figure E)

3 .0 m J

*) Eon and Ets include losses

due to diode recovery

2 .5 m J

2 .0 m J

Ets*

1 .5 m J

1 .0 m J

0 .5 m J

E off

Eon*

0 .0 m J

300V 350V 400V 450V 500V 550V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 16. Typical switching energy losses

as a function of collector emitter

voltage

(inductive load, TJ = 175°C,

VGE = 0/15V, IC = 30A, rG = 10Ω,

Dynamic test circuit in Figure E)

IFAG IPC TD VLS

7

Rev. 2.6 19.05.2015

Share Link: