IKW30N60T(2015) Ver la hoja de datos (PDF) - Infineon Technologies

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IKW30N60T
(Rev.:2015)

Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

Infineon Technologies 

IKW30N60T

TRENCHSTOP™ Series

q

15V

C iss

1nF

120V

10V

480V

5V

100pF

C

oss

0V0nC 30nC 60nC 90nC 120nC 150nC 180nC

C rss

0V

10V 20V 30V 40V

QGE, GATE CHARGE

Figure 17. Typical gate charge

(IC=30 A)

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 18. Typical capacitance as a function

of collector-emitter voltage

(VGE=0V, f = 1 MHz)

400A

300A

200A

100A

0 A1 2 V

14V

16V

18V

VGE, GATE-EMITTETR VOLTAGE

Figure 19. Typical short circuit collector

current as a function of gate-

emitter voltage

(VCE  400V, Tj  150C)

12µs

10µs

8µs

6µs

4µs

2µs

0µs

10V

11V

12V

13V

14V

VGE, GATE-EMITETR VOLTAGE

Figure 20. Short circuit withstand time as a

function of gate-emitter voltage

(VCE=400V, start at TJ=25°C,

TJmax<150°C)

IFAG IPC TD VLS

8

Rev. 2.6 19.05.2015

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