IKW30N60T(2015) Ver la hoja de datos (PDF) - Infineon Technologies

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IKW30N60T
(Rev.:2015)

Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

Infineon Technologies 

IKW30N60T

TRENCHSTOP™ Series

q

100ns

td(on)

10ns

tr

t

d(off)

tf

1ns

0A

10A

20A

30A

Figure 9.

IC, COLLECTOR CURRENT

Typical switching times as a

function of collector current

(inductive load, TJ=175°C,

VCE = 400V, VGE = 0/15V, rG = 10Ω,

Dynamic test circuit in Figure E)

td(off)

t

f

100ns

td(on)

t

r

10ns









RG, GATE RESISTOR

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, TJ = 175°C,

VCE= 400V, VGE = 0/15V, IC = 30A,

Dynamic test circuit in Figure E)

td(off)

100ns

tf

td(on)

tr

10ns

25°C 50°C 75°C 100°C 125°C 150°C

TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load, VCE = 400V,

VGE = 0/15V, IC = 30A, rG=10Ω,

Dynamic test circuit in Figure E)

7V

6V

max.

typ.

5V

4V min.

3V

2V

1V

0V

-50°C

0°C

50°C 100°C 150°C

TJ, JUNCTION TEMPERATURE

Figure 12. Gate-emitter threshold voltage as

a function of junction

temperature

(IC = 0.43mA)

IFAG IPC TD VLS

6

Rev. 2.6 19.05.2015

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