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T224160B

256K x 16 DYNAMIC RAM FAST PAGE MODE

Taiwan Memory Technology 

tm TE

CH

T224160B

DC CHARACTERISTICS

(Ta = 0 to 70°C, Vcc = 5V ±10%, Vss = 0V)

Parameter

Operating Current

Standby Current

-30

-35

-45

-60

Symbol

Unit

Min Max Min Max Min Max Min Max

Test Condition

Icc1 - 200 - 180 - 160 - 140 mA RAS , CAS cycling

tRC=min

TTL interface,

Standby Current

Icc2 - 4 - 4 - 4 - 4 mA RAS , CAS =VIH,

DOUT=High-Z

CMOS interface,

Icc3 - 2 - 2 - 2 - 2 mA

RAS , CAS > Vcc-0.2V

Fast Page Mode Current Icc4 - 200 - 180 - 160 - 140 mA RAS =VIL, CAS

cycling, tPC= min

RAS -only refresh

Current

Icc5 - 200 - 180 - 160 - 140 mA CAS =VIH, RAS

cycling, tRC= min

CAS Before RAS

Refresh Current

Icc6 - 200 - 180 - 160 - 140 mA RAS , CAS cycling,

tRC= min

Note: Icc depends on output load condition when the device is selected.

Icc max is specified at the output open condition, Icc is specified as an average current.

CAPACITANCE

(Ta =25°C, Vcc =5V, f = 1M HZ)

Parameter

Input Capacitance

(address)

Input Capacitance

(RAS ,CAS ,WE ,OE )

Output Capacitance

(data -in/out)

Symbol

Typ

Max

Unit

CI1

-

5

pF

CI2

-

7

pF

CI/O

-

10

pF

Taiwan Memory Technology, Inc. reserves the right P. 4

to change products or specifications without notice.

Publication Date: MAR. 2001

Revision:B

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