T224160B Ver la hoja de datos (PDF) - Taiwan Memory Technology
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T224160B Datasheet PDF : 14 Pages
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T224160B
AC CHARACTERISTICS (continued)
AC CHARACTERISTICS
PARAMETER
-3 0
-35
-45
-60
Note
SYM MIN MAX MIN MAX MIN MAX MIN MAX UNIT
s
Output Buffer Turn-off OE to
tOFF2 - 8 - 8 - 8 - 15 ns 16
Write Command Setup Time
tWCS 0
0
0
0
ns 11,14
Write Command Hold Time
tWCH 4
4
6
10
ns
Write Command Hold Time (Reference tWCR 26
30
46
50
ns 14
toRAS )
Write Command Pulse Width
tWP 4
4
6
10
ns 14
Write Command to RAS Lead Time
tRWL 6
7
9
15
ns 14
Write Command to CAS Lead Time
tCWL 6
7
9
15
ns 14
Data-in Setup Time
tDS 0
0
0
0
ns 12
Data-in Hold Time
tDH 4
4
6
15
ns 12
Data-in Hold Time (Reference to RAS ) tDHR 26
30
40
50
ns
RAS to WE Delay Time
tRWD 46
51
61
85
ns 11
Column Address to WE Delay Time
tAWD 29
31
35
55
ns 11
CAS to WE Delay Time
tCWD 24
25
27
40
ns 11
Transition Time (rise or fall)
tT
1.5 50 2.5 50 2.5 50 3 50 ns 2,3
Refresh Period (512 cycles)
tREF
8
8
8
8 ms
RAS to CAS Precharge Time
tRPC 10
10
10
10
ns
CAS Setup Time (CBR REFRESH)
tCSR 10
10
10
10
ns 6
CAS Hold Time (CBR REFRESH)
tCHR 10
10
10
10
ns 6
OE Hold Time From WE During Read- tOEH 4
4
6
15
ns 15
Modify-Write Cycle
OE Setup Prior to RAS During Hidden tORD 0
0
0
0
ns
Refresh Cycle
Write Command Hold Time (Test Mode in) tWTH 10
10
10
10
ns
Write Command Setup Time (Test Mode in) tWTS 10
10
10
10
ns
Taiwan Memory Technology, Inc. reserves the right P. 6
to change products or specifications without notice.
Publication Date: MAR. 2001
Revision:B
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