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T224160B

256K x 16 DYNAMIC RAM FAST PAGE MODE

Taiwan Memory Technology 

tm TE

CH

T224160B

READ WRITE CYCLE

(LATE WRITE and READ-MODIFY-WRITE CYCLES)

RA S VVIIHL

CA S VVIIHL

ADDR VVIIHL

WE VVIIHL

I/O

VIOH

V IOL

OE

VIH

V IL

tR WC

tR A S

tR P

tC R P

tRC D

tC S H

tR SH

tC A S

tA SR

tA R

tR AD

tR A H

RO W

tA SC

tR AL

tC A H

C OLUM N

tR C S

tR WD

tC WD

tA WD

tC WL

tR WL

tWP

RO W

OP EN

tC L Z

tA A

tR A C

tC AC

tD S t DH

tOA C

V A LID DO U T V A L ID D IN

tO F F 2

tOE H

OPE N

FAST-PAGE-MODE READ CYCLE

RAS

VIH

VIL

CAS VVIIHL

ADDR VVIIHL

WE

VIH

VIL

I / O VOH

VOL

OE

VIH

VIL

tCRP

tCSH

tRCD

tCAS

t RASC

tPC

tCP

tCAS

tCP

tRSH

tCAS

tRP

tCPN

tASR

tRAD

tRAH

ROW

tAR

tASC

tCAH

COLUMN

tRCS

tASC tCAH

COLUMN

tASC

tCAH

tRAL

COLUMN

tRCH

ROW

tRRH

OPEN

tAA

tRAC

tCAC

tCLZ

tOFF1 tCLZ

tAA

tACP

tCAC

tOFF1 tCLZ

tAA

tACP

tCAC

tOFF1

tOAC

VALID

DAT A

tOFF2

tOAC

VALID

DATA

tOFF2

tOAC

VALID

DAT A

tOFF2

OPEN

DON'T CARE

UNDEF INED

Note: 1. tOFF1 is referenced from the rising edge of RAS or CAS , whichever occurs last.

2. tPC can be measured from falling edge of CAS to falling edge of CAS , or from rising edge of

CAS to rising edge of CAS . Both measurements must meet the tPC specification.

Taiwan Memory Technology, Inc. reserves the right P. 9

to change products or specifications without notice.

Publication Date: MAR. 2001

Revision:B

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