T224160B Ver la hoja de datos (PDF) - Taiwan Memory Technology
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T224160B Datasheet PDF : 14 Pages
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T224160B
AC CHARACTERISTICS (note 1,2,3) (Ta = 0 to 70°C)
AC TEST CONDITIONS:
Vcc=5V ±10%, input pulse level = 0 to 3V
Input rise and fall times: 2ns
Output Load: 2TTL gate + CL (50pF)
AC CHARACTERISTICS
PARAMETER
SYM
-30
-3 5
-4 5
-60 UNIT Note
MIN MAX MIN MAX MIN MAX MIN MAX
s
Read or Write Cycle Time
Read-Modify-Write Cycle Time
Fast-Page-Mode Read or Write Cycle Time
Fast-Page-Mode Read-Write Cycle Time
Access Time From RAS
tRC 55
65
85
110
ns
tRWC 85
95
115
155
ns
tPC 19
21
25
40
ns
tPCM 56
58
65
80
ns
tRAC
30
35
45
60 ns 4
Access Time From CAS
tCAC
8
9
11
15 ns 5
Access Time From OE
tOAC
8
9
11
15 ns 13
Access Time From Column Address
Access Time From CAS Precharge
tAA
13
15
19
30 ns 8
tACP
15
18
22
35 ns
RAS Pulse Width
tRAS 30 10K 35 10K 45 10K 60 10K ns
RAS Pulse Width
tRASC 30 100K 35 100K 45 100K 60 100K ns
RAS Hold Time
tRSH 8
9
11
15
ns
RAS Precharge Time
tRP 25
30
35
40
ns
CAS Pulse Width
tCAS 5 10K 6 10K 7 10K 15 10K ns
CAS Hold Time
tCSH 30
35
45
60
ns
CAS Precharge Time
tCP 3
3
5
10
ns
RAS to CAS Delay Time
tRCD 10 24 10 28 10 37 20 45 ns 7
CAS to RAS Precharge Time
tCRP 3
3
5
5
ns
Row Address Setup Time
Row Address Hold Time
RAS to Column Address Delay Time
tASR 0
0
0
0
ns
tRAH 5
5
5
5
ns
tRAD 8 17 8 20 8 26 15 30 ns 8
Column Address Setup Time
tASC 0
0
0
0
ns
Column Address Hold Time
tCAH 4
4
6
15
ns
Column Address Hold Time (Reference to
RAS )
tAR 26
30
40
50
ns
Column Address to RAS Lead Time
tRAL 13
15
19
30
ns
Read Command Setup Time
tRCS 0
0
0
0
ns 14
Read Command Hold Time Reference to CAS tRCH 0
0
0
0
ns 9,14
Read Command Hold Time Reference to RAS tRRH 0
0
0
0
ns 9
CAS to Output in Low -Z
tCLZ 3
3
3
3
ns
Output Buffer Turn-off Delay From CAS or
RAS
ns 10,16
tOFF1 3 15 3 15 3 15 3 15
Taiwan Memory Technology, Inc. reserves the right P. 5
to change products or specifications without notice.
Publication Date: MAR. 2001
Revision:B
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