IRG4BC10SD-L Ver la hoja de datos (PDF) - International Rectifier
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IRG4BC10SD-L
International Rectifier
IRG4BC10SD-L Datasheet PDF : 13 Pages
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IRG4BC10SD-S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
∆V(BR)CES/∆TJ
VCE(on)
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
VFM
IGES
Parameter
Collector-to-Emitter Breakdown VoltageS
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward TransconductanceT
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Min. Typ. Max. Units
600 — — V
— 0.64 — V/°C
— 1.58 1.8
— 2.05 — V
— 1.68 —
3.0 — 6.0
— -9.5 — mV/°C
3.65 5.48 — S
— — 250 µA
— — 1000
— 1.5 1.8 V
— 1.4 1.7
— — ±100 nA
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0mA
IC = 8.0A
IC = 14.0A
VGE = 15V
See Fig. 2, 5
IC = 8.0A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC =8.0A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
IC =4.0A
See Fig. 13
IC =4.0A, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery Current
Qrr
Diode Reverse Recovery Charge
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
Details of note Q through T are on the last page
2
— 15 22
IC = 8.0A
— 2.42 3.6 nC VCC = 400V
See Fig. 8
— 6.53 9.8
VGE = 15V
— 76 —
TJ = 25°C
— 32 — ns IC = 8.0A, VCC = 480V
— 815 1200
VGE = 15V, RG = 100Ω
— 720 1080
Energy losses include "tail" and
— 0.31 —
diode reverse recovery.
— 3.28 — mJ See Fig. 9, 10, 18
— 3.60 10.9
— 1.46 2.6 mJ IC = 5.0A
— 70 —
TJ = 150°C, See Fig. 10,11, 18
— 36 —
— 890 —
ns IC = 8.0A, VCC = 480V
VGE = 15V, RG = 100Ω
— 890 —
Energy losses include "tail" and
— 3.83 — mJ diode reverse recovery.
— 7.5 — nH Measured 5mm from package
— 280 —
VGE = 0V
— 30 — pF VCC = 30V
See Fig. 7
— 4.0 —
ƒ = 1.0MHz
— 28 42 ns TJ = 25°C See Fig.
— 38 57
TJ = 125°C 14
IF =4.0A
— 2.9 5.2 A TJ = 25°C See Fig.
— 3.7 6.7
TJ = 125°C 15
VR = 200V
— 40 60 nC TJ = 25°C See Fig.
— 70 105
TJ = 125°C
16 di/dt = 200A/µs
— 280 — A/µs TJ = 25°C See Fig.
— 235 —
TJ = 125°C 17
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