IRG4BC10SD-L Ver la hoja de datos (PDF) - International Rectifier

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IRG4BC10SD-L

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier 

500

 VGE = 0V, f = 1MHz

Cies = Cge + Cgc , Cce SHORTED

Cres = Cgc

400

Coes = Cce + Cgc

 Cies

300

C oes

200

100

C res

0

1

10

100

VCE, Collector-to-Emitter Voltage (V)

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

IRG4BC10SD-S/L

 20

VCC = 400V

I C = 8A

15

10

5

0

0

5

10

15

20

QG, Total Gate Charge (nC)

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

 3.60 VCC = 480V

VGE = 15V

3.55

TJ

IC

= 25 °C

= 8A

3.50

3.45

3.40

3.35

3.30

0

20

40

60

80

100

RGRG, G, GataeteRReessisistatannccee((OΩh) m)

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

www.irf.com

 100 RG =1O0h0mΩ

VGE = 15V

VCC = 480V

10

1

 IC = 16A

 IC = 8A

 IC = 4A

0.1

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature (° C )

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

5

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