IRG4BC10SD-L Ver la hoja de datos (PDF) - International Rectifier

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IRG4BC10SD-L

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier 

10.0

8.0

6.0

4.0

2.0

0.0

0.1

60% of rated

vo lta ge

Ideal diodes

IRG4BC10SD-S/L

Duty cycle : 50%

Tj = 125°C

Tsink = 90°C Ta = 55°C

Gate drive as specified

Turn-on losses include effects of

reverse recovery

Power Dissipation = 9.2W for Heatsink Mount

Power Dissipation = 1.8W for typical

PCB socket Mount

1

10

100

f , Frequency ( kHz )

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

100

100

 TJ = 25 °C

10

 TJ = 150 °C

 VGE = 15V

80µs PULSE WIDTH

1

0.5

1.0

1.5

2.0

2.5

3.0

VCE , Collector-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics

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10  TJ = 150 °C

 TJ = 25 °C

 VCC = 50V

5µs PPUULLSSEEWWIDIDTHTH

1

6

8

10

12

VGE , Gate-to-Emitter Voltage (V)

Fig. 3 - Typical Transfer Characteristics

3

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