IRG4BC10SD-L Ver la hoja de datos (PDF) - International Rectifier

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IRG4BC10SD-L

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier 

50

IF = 8.0A

45

IF = 4.0A

40

35

30

25

VR = 2 00 V

TJ = 125°C

TJ = 25°C

20

100

1000

di f /dt - (A/µs)

Fig. 14 - Typical Reverse Recovery vs. dif/dt

200

VR = 2 00 V

TJ = 125°C

TJ = 25°C

160

IF = 8.0A

120

IF = 4.0A

IRG4BC10SD-S/L

14

VR = 20 0V

TJ = 125°C

12 TJ = 25°C

I F = 8.0A

10

IF = 4.0A

8

6

4

2

0

100

1000

dif /dt - (A/µs)

Fig. 15 - Typical Recovery Current vs. dif/dt

1000

VR = 20 0V

TJ = 125°C

TJ = 25°C

I F = 8.0A

I F = 4.0A

80

40

0

100

1000

di f /dt - (A/µs)

Fig. 16 - Typical Stored Charge vs. dif/dt

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100

100

di f /dt - (A/µs)

Fig. 17 - Typical di(rec)M/dt vs. dif/dt,

A

1000

7

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