IRG4BC10SD-L Ver la hoja de datos (PDF) - International Rectifier

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IRG4BC10SD-L

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier 

IRG4BC10SD-S/L

Same type

device as

D .U .T .

80%

of Vce

430µF

D .U .T .

Vge

VC

90%

Fig. 18a - Test Circuit for Measurement of

ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf

IC 5%10%

t d(on)

10%

90%

t d(off)

tr

tf

Eon

Eoff

E ts = (Eon +Eoff )

t=5µs

Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining

Eoff, td(off), tf

10% +Vg

G ATE VO LTA G E D .U .T.

+Vg

Vce

10% Ic

Vcc

90% Ic

td(on)

5% Vce

tr

t1

DUT VOLTAGE

AND CURRENT

Ipk

Ic

∫ t2

E on = VVcceeieIcdtdt

t1

t2

Fig. 18c - Test Waveforms for Circuit of Fig. 18a,

Defining Eon, td(on), tr

8

trr

Ic

tx

10% Vcc

Vpk

Irr

trr

∫ Q rr = iIdcddt t

tx

10% Irr

Vcc

DIODE RECOVERY

W AVEFORMS

DIO DE REVE RSE

RECOVERY ENERGY

t3

∫ t4

E rec = VVddidIcdt dt

t3

t4

Fig. 18d - Test Waveforms for Circuit of Fig. 18a,

Defining Erec, trr, Qrr, Irr

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