General Description
The A29DL323 is a flash memory organized of 33,554,432 bits and 71 sectors. Sectors of this memory can be erased at a low voltage (2.7 to 3.6 V) supplied from a single power source, or the contents of the entire chip can be erased. Two modes of memory organization, BYTE mode (4,194,304 words × 8 bits) and WORD mode (2,097,152 words × 16 bits), are selectable so that the memory can be programmed in byte or word units.

Features
■ Two bank organization enabling simultaneous execution of erase / program and read
■ Bank organization: 2 banks (8 Mbits + 24 Mbits)
■ Memory organization:
    - 4,194,304 words x 8 bits (BYTE mode)
    - 2,097,152 words x 16 bits (WORD mode)
■ Sector organization: 71 sectors (8 Kbytes / 4 Kwords × 8 sectors, 64 Kbytes / 32 Kwords × 63 sectors)
■ 2 types of sector organization
    - T type: Boot sector allocated to the highest address (sector)
    - B type: Boot sector allocated to the lowest address (sector)
■ 3-state output
■ Automatic program
    - Program suspend / resume
■ Unlock bypass program
■ Automatic erase
    - Chip erase
    - Sector erase (sectors can be combined freely)
■ Erase suspend / resume
■ Program / Erase completion detection
    - Detection through data polling and toggle bits
    - Detection through RY/BY pin
■ Sector group protection
    - Any sector group can be protected
    - Any protected sector group can be temporary unprotected
■ Sectors can be used for boot application
■ Hardware reset and standby using RESET pin
■ Automatic sleep mode
■ Boot block sector protect by WP (ACC) pin
■ Conforms to common flash memory interface (CFI)
■ Extra One Time Protect Sector provided
■ Operating ambient temperature: -40 to 85°C
■ Program / erase time
    - Program: 9.0 µs / byte (TYP.) 11.0 µs / word (TYP.)
    - Sector erase: 0.7 s (TYP.)
■ Number of program / erase: 1,000,000 times (MIN.)
■ Package options
    - 48-pin TSOP (I) or 63-ball TFBGA