CPD65 Hoja de datos - Central Semiconductor
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CPD65
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Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 9.5 X 9.5 MILS
Die Thickness 7.5 MILS
Anode Bonding Pad Area 2.5 MILS DIAMETER
Top Side Metalization Al - 30,000Å
Back Side Metalization Au - 13,000Å
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