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FDC699P image

Número de pieza
FDC699P

componentes Descripción

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page
6 Pages

File Size
155.3 kB

Fabricante
Fairchild
Fairchild Semiconductor Fairchild

General Description
This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).


FEATUREs
• –7 A, –20 V RDS(ON) = 22 mΩ @ VGS = –4.5 V RDS(ON) = 30 mΩ @ VGS = –2.5 V
• High performance trench technology for extremely low RDS(ON)
• Fast switching speed
• FLMP SuperSOT-6 package: Enhanced thermal performance in industry-standard package size


APPLICATIONs
• Battery management
• Load Switch
• Battery protection

Page Link's: 1  2  3  4  5  6 

Número de pieza
componentes Descripción
PDF
Fabricante
P-Channel 2.5V Specified PowerTrench® MOSFET
Ver
Fairchild Semiconductor
P-Channel 2.5V Specified PowerTrench® MOSFET ( Rev : 1999 )
Ver
Fairchild Semiconductor
P-Channel 2.5V PowerTrench® Specified MOSFET
Ver
Fairchild Semiconductor
P-Channel 2.5V Specified PowerTrench® MOSFET ( Rev : 2001 )
Ver
Fairchild Semiconductor
P-Channel 2.5V Specified PowerTrench® MOSFET
Ver
Fairchild Semiconductor
P-Channel 2.5V PowerTrench® Specified MOSFET
Ver
Fairchild Semiconductor
P-Channel 2.5V Specified PowerTrench® MOSFET
Ver
Fairchild Semiconductor
P-Channel 2.5V Specified PowerTrench® MOSFET
Ver
Fairchild Semiconductor
P-Channel 2.5V Specified PowerTrench® MOSFET
Ver
Fairchild Semiconductor
P-Channel 2.5V Specified PowerTrench® MOSFET
Ver
Fairchild Semiconductor

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