General Description
This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).
FEATUREs
• –7 A, –20 V RDS(ON) = 22 mΩ @ VGS = –4.5 V RDS(ON) = 30 mΩ @ VGS = –2.5 V
• High performance trench technology for extremely low RDS(ON)
• Fast switching speed
• FLMP SuperSOT-6 package: Enhanced thermal performance in industry-standard package size
APPLICATIONs
• Battery management
• Load Switch
• Battery protection