IKB03N120H2 Hoja de datos - Infineon Technologies
Número de pieza
IKB03N120H2
componentes Descripción
Other PDF
no available.
PDF
page
15 Pages
File Size
421.4 kB
Fabricante
Infineon Technologies
• Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
• 2nd generation HighSpeed-Technology for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =3A
• Complete product spectrum and PSpice Models : //www.infineon.com/igbt/
Número de pieza
componentes Descripción
PDF
Fabricante
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
Infineon Technologies
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode ( Rev : 2006 )
Infineon Technologies
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
Infineon Technologies
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
Infineon Technologies
HighSpeed 2-Technology with soft, fast recovery anti-parallel Emitter Controlled HE diode ( Rev : 2013 )
Infineon Technologies
HighSpeed 2-Technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode ( Rev : 2008 )
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode ( Rev : 2002 )
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode ( Rev : 2008 )
Infineon Technologies
Share Link: