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IRF7809AV Hoja de datos - International Rectifier

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Número de pieza
IRF7809AV

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page
8 Pages

File Size
190.7 kB

Fabricante
IR
International Rectifier IR

Description
This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors.

• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Minimizes Parallel MOSFETs for high current applications
• 100% Tested for RG

 

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Número de pieza
componentes Descripción
PDF
Fabricante
HEXFET Power MOSFET. VDS = 30V, RDS(on) = 7.0mΩ
Ver
International Rectifier
HEXFET© Power MOSFET
Ver
International Rectifier
Power MOSFET(Vdss=30V/ Rds(on)=3.3mohm/ Id=75A)
Ver
International Rectifier
Power MOSFET(Vdss=30V, Rds(on)=0.031ohm, Id=35A)
Ver
International Rectifier
Power MOSFET(Vdss=30V/ Rds(on)=3.3mohm/ Id=75A)
Ver
International Rectifier
HEXFET power MOSFET. VDSS = -20V, RDS(on) = 0.055 Ohm.
Ver
International Rectifier
HEXFET Power MOSFET(Vdss=800V, Rds(on)=2.0ohm, Id=5.4A)
Ver
International Rectifier
HEXFET Power MOSFET(VDSS= 40V RDS(on)= 3.7mΩ ID= 75A)
Ver
International Rectifier
HEXFET Power MOSFET(Vdss=600V/ Rds(on)=1.2ohm/ Id=6.2A)
Ver
International Rectifier
HEXFET Power MOSFET Vdss=-55V, Rds(on)=0.06ohm,Id=-31A
Ver
International Rectifier

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