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IRGBC30MD2-S Hoja de datos - International Rectifier

IRGBC30MD2-S image

Número de pieza
IRGBC30MD2-S

Other PDF
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page
8 Pages

File Size
382 kB

Fabricante
IR
International Rectifier IR

Description
Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications.


FEATUREs
• Short circuit rated -10µs @125°C, VGE= 15V
•  Switching-loss rating includes all "tail" losses
• HEXFRED™ soft ultrafast diodes
•  Optimized for medium operating frequency ( 1 to 10kHz)

Page Link's: 1  2  3  4  5  6  7  8 

Número de pieza
componentes Descripción
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Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Ver
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Ver
International Rectifier

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