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RD06HVF1(2006) Hoja de datos - MITSUBISHI ELECTRIC

RD06HVF1 image

Número de pieza
RD06HVF1

Other PDF
  2008   2010   lastest PDF  

PDF
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page
8 Pages

File Size
376.4 kB

Fabricante
Mitsubishi
MITSUBISHI ELECTRIC  Mitsubishi

DESCRIPTION
RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.


FEATURES
   High power gain:
      Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz


APPLICATION
   For output stage of high power amplifiers in VHF band mobile radio sets.


Número de pieza
componentes Descripción
PDF
Fabricante
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W
Ver
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W ( Rev : 2006 )
Ver
Mitsumi
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W ( Rev : 2006 )
Ver
Mitsumi
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W ( Rev : 2010 )
Ver
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
Ver
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W ( Rev : 2010 )
Ver
Mitsumi
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W ( Rev : 2010 )
Ver
Mitsumi
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
Ver
Mitsumi
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W ( Rev : 2008 )
Ver
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W
Ver
MITSUBISHI ELECTRIC

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