IKW30N60T Ver la hoja de datos (PDF) - Infineon Technologies

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IKW30N60T

Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Infineon Technologies 

TrenchStop Series

IKW30N60T

q

TJ=175°C

20A

15A

TJ=25°C

10A

5A

0A

700A/µs 800A/µs 900A/µs 1000A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 25. Typical reverse recovery current

as a function of diode current

slope

(VR = 400V, IF = 30A,

Dynamic test circuit in Figure E)

-600A/µs

TJ=25°C

-450A/µs

-300A/µs

TJ=175°C

-150A/µs

0A/µs

700A/µs 800A/µs 900A/µs 1000A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 26. Typical diode peak rate of fall of

reverse recovery current as a

function of diode current slope

(VR=400V, IF=30A,

Dynamic test circuit in Figure E)

70A

60A

TJ=25°C

175°C

50A

40A

30A

20A

10A

0A

0V

1V

2V

VF, FORWARD VOLTAGE

Figure 27. Typical diode forward current as

a function of forward voltage

2.0V

IF=60A

1.5V

1.0V

30A

15A

0.5V

0.0V

0°C

50°C

100°C

150°C

TJ, JUNCTION TEMPERATURE

Figure 28. Typical diode forward voltage as a

function of junction temperature

Power Semiconductors

10

Rev. 2.1 Dev-04

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