IKW30N60T Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Lista de partido
IKW30N60T
Infineon Technologies
IKW30N60T Datasheet PDF : 13 Pages
| |||
TrenchStop Series
IKW30N60T
q
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=25°C,
VCC=400V,IC=30A,
VGE=0/15V,
RG=10.6 Ω,
Lσ1)=136nH,
Cσ1)=39pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=25°C,
VR=400V, IF=30A,
diF/dt=910A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
Value
Typ.
23
21
254
46
0.69
0.77
1.46
143
0.92
16.3
603
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
- A/µs
Switching Characteristic, Inductive Load, at Tj=175 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=175°C,
VCC=400V,IC=30A,
VGE=0/15V,
RG= 10.6 Ω
Lσ1)=136nH,
Cσ1)=39pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=175°C
VR=400V, IF=30A,
diF/dt=910A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
Value
Typ.
24
26
292
90
1.0
1.1
2.1
225
2.39
22.3
310
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
- A/µs
1) Leakage inductance Lσ an d Stray capacity C σ due to dynamic test circuit in Figure E.
Power Semiconductors
3
Rev. 2.1 Dev-04
Share Link: