IKW30N60T Ver la hoja de datos (PDF) - Infineon Technologies

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IKW30N60T

Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Infineon Technologies 

TrenchStop Series

IKW30N60T

q

15V

C iss

1nF

120V

480V

10V

100pF

C oss

5V

C rss

0V0nC 3 0nC 6 0n C 90 nC 12 0nC 150 nC 1 80n C

QGE, GATE CHARGE

Figure 17. Typical gate charge

(IC=30 A)

0V

10V 20V 30V 40V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 18. Typical capacitance as a function

of collector-emitter voltage

(VGE=0V, f = 1 MHz)

400A

300A

200A

100A

0 A1 2 V

14V

16V

18V

VGE, GATE-EMITTETR VOLTAGE

Figure 19. Typical short circuit collector

current as a function of gate-

emitter voltage

(VCE ≤ 400V, Tj ≤ 150°C)

12µs

10µs

8µs

6µs

4µs

2µs

0µs

10V

11V

12V

13V

14V

VGE, GATE-EMITETR VOLTAGE

Figure 20. Short circuit withstand time as a

function of gate-emitter voltage

(VCE=600V, start at TJ=25°C,

TJmax<150°C)

Power Semiconductors

8

Rev. 2.1 Dev-04

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