IKW30N60T Ver la hoja de datos (PDF) - Infineon Technologies
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IKW30N60T
Infineon Technologies
IKW30N60T Datasheet PDF : 13 Pages
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TrenchStop Series
IKW30N60T
q
Low Loss DuoPack : IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
• Designed for :
- Frequency Converters
- Uninterruptible Power Supply
• Trench and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low VCE(sat)
• Positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel EmCon HE diode
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
P-TO-247-3-1
(TO-220AC)
Type
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking Code
IKW30N60T 600V 30A
1.5V
175°C
K30T60
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current, limited by Tjmax
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C)
Diode forward current, limited by Tjmax
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time1)
VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
-
Package Ordering Code
TO-247 Q67040S4717
Value
Unit
600
V
A
60
30
90
90
60
30
90
±20
V
5
µs
187
W
-40...+175
°C
-55...+175
260
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.1 Dev-04
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