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IKW30N60T

Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Infineon Technologies 

Thermal Resistance

Parameter

Characteristic

IGBT thermal resistance,

junction – case

Diode thermal resistance,

junction – case

Thermal resistance,

junction – ambient

TrenchStop Series

Symbol

RthJC

RthJCD

RthJA

Conditions

TO-247

TO-247

TO-247 AC

IKW30N60T

q

Max. Value

Unit

0.80

K/W

1.05

40

Electrical Characteristic, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Static Characteristic

Collector-emitter breakdown voltage

Collector-emitter saturation voltage

Diode forward voltage

Gate-emitter threshold voltage

Zero gate voltage collector current

Gate-emitter leakage current

Transconductance

Integrated gate resistor

V(BR)CES

VCE(sat)

VF

VGE(th)

ICES

VGE=0V, IC=0.2mA

VGE = 15V, IC=30A

Tj=25°C

Tj=175°C

VGE=0V, IF=30A

Tj=25°C

Tj=175°C

IC=0.43mA,

VCE=VGE

VCE=600V,

VGE=0V

Tj=25°C

Tj=175°C

IGES

gfs

RGint

VCE=0V,VGE=20V

VCE=20V, IC=30A

min.

600

-

-

-

-

4.1

-

-

-

-

Value

typ.

-

1.5

1.9

1.65

1.6

4.9

-

-

-

16.7

-

Unit

max.

-V

2.05

-

2.05

-

5.7

µA

40

1000

100 nA

-S

Ω

Dynamic Characteristic

Input capacitance

Ciss

VCE=25V,

-

Output capacitance

Coss

VGE=0V,

-

Reverse transfer capacitance

Crss

f=1MHz

-

Gate charge

QGate

VCC=480V, IC=30A

-

VGE=15V

Internal emitter inductance

LE

TO-247-3-1

-

measured 5mm (0.197 in.) from case

Short circuit collector current1)

IC(SC)

VGE=15V,tSC≤5µs

-

VCC = 400V,

Tj = 150°C

1) Allowed number of short circuits: <1000; time between short circuits: >1s.

Power Semiconductors

2

1630

108

50

167

7

275

- pF

-

-

- nC

- nH

-A

Rev. 2.1 Dev-04

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