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IKW30N60T

Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Infineon Technologies 

TrenchStop Series

IKW30N60T

q

5.0mJ

*) Eon and Ets include losses

due to diode recovery

4.0mJ

Ets*

*) Eon and Ets include losses

due to diode recovery

E ts*

3.0m J

3.0mJ

2.0mJ

Eoff

1.0mJ

0.0mJ

0A

Eon*

10A 20A 30A 40A 50A

IC, COLLECTOR CURRENT

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, TJ = 175°C,

VCE = 400V, VGE = 0/15V, RG = 10Ω,

Dynamic test circuit in Figure E)

E off

2.0m J

1.0m J

E on*

0.0m J

0Ω

10Ω

20Ω

30Ω

40Ω

RG, GATE RESISTOR

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, TJ = 175°C,

VCE = 400V, VGE = 0/15V, IC = 30A,

Dynamic test circuit in Figure E)

1.6mJ *) Eon and Ets include losses

due to diode recovery

Ets*

1.4mJ

1.2mJ

1.0mJ

0.8mJ

Eoff

0.6mJ

0.4mJ

0.2mJ Eon*

0.0mJ

25°C 50°C 75°C 100°C 125°C 150°C

TJ, JUNCTION TEMPERATURE

Figure 15. Typical switching energy losses

as a function of junction

temperature

(inductive load, VCE = 400V,

VGE = 0/15V, IC = 30A, RG = 10Ω,

Dynamic test circuit in Figure E)

3 .0 m J

*) Eon and Ets include losses

due to diode recovery

2 .5 m J

2 .0 m J

E ts*

1 .5 m J

1 .0 m J

0 .5 m J

E off

Eon*

0 .0 m J

300V 350V 400V 450V 500V 550V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 16. Typical switching energy losses

as a function of collector emitter

voltage

(inductive load, TJ = 175°C,

VGE = 0/15V, IC = 30A, RG = 10Ω,

Dynamic test circuit in Figure E)

Power Semiconductors

7

Rev. 2.1 Dev-04

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