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HEF4517B_09 Datasheet PDF : 15 Pages
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NXP Semiconductors
HEF4517B
Dual 64-bit static shift register
9. Recommended operating conditions
Table 5.
Symbol
VDD
VI
Tamb
Δt/ΔV
Recommended operating conditions
Parameter
Conditions
supply voltage
input voltage
ambient temperature
in free air
input transition rise and fall rate
VDD = 5 V
VDD= 10 V
VDD= 15 V
10. Static characteristics
Min Typ Max
3
-
15
0
-
VDD
−40 -
+85
-
-
3.75
-
-
0.5
-
-
0.08
Unit
V
V
°C
μs/V
μs/V
μs/V
Table 6. Static characteristics
VSS = 0 V; VI = VSS or VDD unless otherwise specified.
Symbol Parameter
Conditions
VDD
VIH
HIGH-level input voltage |IO| < 1 μA
VIL
LOW-level input voltage |IO| < 1 μA
VOH
HIGH-level output voltage |IO| < 1 μA
VOL
LOW-level output voltage |IO| < 1 μA
IOH
HIGH-level output current VO = 2.5 V
VO = 4.6 V
VO = 9.5 V
VO = 13.5 V
IOL
LOW-level output current VO = 0.4 V
VO = 0.5 V
VO = 1.5 V
II
input leakage current
IDD
supply current
IO = 0 A
CI
input capacitance
5V
10 V
15 V
5V
10 V
15 V
5V
10 V
15 V
5V
10 V
15 V
5V
5V
10 V
15 V
5V
10 V
15 V
15 V
5V
10 V
15 V
-
Tamb = −40 °C Tamb = 25 °C
Min Max Min Max
3.5
-
3.5
-
7.0
-
7.0
-
11.0 - 11.0 -
-
1.5
-
1.5
-
3.0
-
3.0
-
4.0
-
4.0
4.95 - 4.95 -
9.95 - 9.95 -
14.95 - 14.95 -
- 0.05 - 0.05
- 0.05 - 0.05
- 0.05 - 0.05
−1.7 - −1.4 -
−0.52 - −0.44 -
−1.3 - −1.1 -
−3.6 - −3.0 -
0.52 - 0.44 -
1.3
-
1.1
-
3.6
-
3.0
-
- ±0.3 - ±0.3
-
50
-
50
-
100
-
100
-
200
-
200
-
-
-
7.5
Tamb = 85 °C Unit
Min Max
3.5
-V
7.0
-V
11.0 - V
-
1.5 V
-
3.0 V
-
4.0 V
4.95 - V
9.95 - V
14.95 - V
- 0.05 V
- 0.05 V
- 0.05 V
−1.1 - mA
−0.36 - mA
−0.9 - mA
−2.4 - mA
0.36 - mA
0.9
- mA
2.4
- mA
- ±1.0 μA
-
375 μA
-
750 μA
- 1500 μA
-
- pF
HEF4517B_6
Product data sheet
Rev. 06 — 10 December 2009
© NXP B.V. 2009. All rights reserved.
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