2SJ574 - Renesas Electronics Hoja de datos - DataSheetBank

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2SJ574 Hoja de datos - Renesas Electronics

2SJ574 image

Número de pieza

2SJ574

componentes Descripción

Silicon P Channel MOS FET High Speed Switching

Other PDF

2003 2014

PDF

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page

7 Pages

File Size

82.3 kB

Fabricante

Renesas Electronics

Renesas

Features
• Low on-resistance
RDS = 1.1 Ω typ. (VGS = –10 V, ID = –150 mA)
RDS = 2.2 Ω typ. (VGS = –4 V, ID = –150 mA)
• 4 V gate drive device.
• Small package (MPAK)

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Número de pieza

componentes Descripción

PDF

Fabricante

Silicon P Channel MOS FET High Speed Switching

Hitachi -> Renesas Electronics

Silicon P Channel MOS FET High Speed Switching

Hitachi -> Renesas Electronics

Silicon P Channel MOS FET High Speed Switching

Hitachi -> Renesas Electronics

Silicon P Channel MOS FET High Speed Switching

Hitachi -> Renesas Electronics

Silicon P Channel MOS FET High Speed Switching

Hitachi -> Renesas Electronics

Silicon P Channel MOS FET High Speed Switching

Renesas Electronics

Silicon P Channel MOS FET High Speed Switching

Renesas Electronics

P-Channel MOS FET / High-Speed Switching

NEC => Renesas Technology

P-Channel MOS FET / HIGH-SPEED SWITCHING

NEC => Renesas Technology

Silicon P-Channel MOS FET High Speed Power Switching

Renesas Electronics

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