GENERAL DESCRIPTION
The CB65000 standard cell series uses a high performance, low-voltage, 0.18 µm drawn, six metal levels, high density and high speed HCMOS8D process. With an average routed gate density of 85,000 gates/mm2, the CB65000 family allows the integration of up to 30 million equivalent gates and is ideal for high-complexity or high-performance devices for computer, telecom munication and consumer products. With a gate delay of 35 ps with High Performance transistor and 60 ps with Low Leakage transistor (for a 2-input NAND gate at fan-out 1), the library meets the most demanding speed requirements in telecommunication and computer application designs today. Optimized for 1.8 V operation, the library features a power consumption of less than 35 nW/Gate/MHz (High Performance; fan-out=1) and 25 nW/Gate/MHz (Low Leakage; fan-out=1) at 1.8 V.