DESCRIPTION
The IGBT technology is the key to Vishay’s HPP advanced line of IMS (Insulated Metal Substrate) power modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium.

FEATURES
• Short circuit rated ultrafast: Optimized for high speed over 5.0 kHz (see fig. 1 for current vs. frequency curve), and short circuit rated to 10 µs at 125 °C, VGE = 15 V
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all “tail” losses
• HEXFRED® soft ultrafast diodes
• Totally lead (Pb)-free
• Designed and qualified for industrial level