Fabricante
![IR](/logo/IR.png)
International Rectifier
![IR](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
Description
HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for,provides thedesigner with an extremely efficient and reliable device for battery and load management.
The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards.
● Ultra Low On-Resistance
● Dual P-Channel MOSFET
● Very Small SOIC Package
● Low Profile (< 1.2mm)
● Available in Tape & Reel
Número de pieza
componentes Descripción
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Fabricante
HEXFET power MOSFET. VDSS = -20V, RDS(on) = 0.055 Ohm.
International Rectifier
HEXFET Power MOSFET VDSS=20V RDS(on)max=8.4mΩ Qg=3.9nC
International Rectifier
HEXFET Power MOSFET VDSS=20V RDS(on)max=8.4mΩ Qg=3.9nC
Unspecified
HEXFET Power MOSFET VDSS=20V RDS(on)max=8.4mΩ Qg=3.9nC
Unspecified
HEXFET Power MOSFET VDSS=20V RDS(on)max=8.4mΩ Qg=3.9nC
International Rectifier
Power MOSFET(Vdss=60V/ Rds(on)=0.042ohm/ Id=21A)
International Rectifier
Power MOSFET (Vdss=500V, Rds(on)=3.0ohm, Id=2.1A)
International Rectifier
Power MOSFET(Vdss=60V Rds(on)=0.018ohm Id=37A)
International Rectifier
Power MOSFET(Vdss=30V/ Rds(on)=3.3mohm/ Id=75A)
International Rectifier
Power MOSFET(Vdss=100V, Rds(on)=0.052ohm, Id=20A)
International Rectifier