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IRF7756 Hoja de datos - International Rectifier

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Número de pieza
IRF7756

componentes Descripción

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9 Pages

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Fabricante
IR
International Rectifier IR

Description
HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for,provides thedesigner with an extremely efficient and reliable device for battery and load management.
The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards.

● Ultra Low On-Resistance
● Dual P-Channel MOSFET
● Very Small SOIC Package
● Low Profile (< 1.2mm)
● Available in Tape & Reel

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Número de pieza
componentes Descripción
PDF
Fabricante
HEXFET power MOSFET. VDSS = -20V, RDS(on) = 0.055 Ohm.
Ver
International Rectifier
HEXFET Power MOSFET VDSS=20V RDS(on)max=8.4mΩ Qg=3.9nC
Ver
International Rectifier
HEXFET Power MOSFET VDSS=20V RDS(on)max=8.4mΩ Qg=3.9nC
Ver
Unspecified
HEXFET Power MOSFET VDSS=20V RDS(on)max=8.4mΩ Qg=3.9nC
Ver
Unspecified
HEXFET Power MOSFET VDSS=20V RDS(on)max=8.4mΩ Qg=3.9nC
Ver
International Rectifier
Power MOSFET(Vdss=60V/ Rds(on)=0.042ohm/ Id=21A)
Ver
International Rectifier
Power MOSFET (Vdss=500V, Rds(on)=3.0ohm, Id=2.1A)
Ver
International Rectifier
Power MOSFET(Vdss=60V Rds(on)=0.018ohm Id=37A)
Ver
International Rectifier
Power MOSFET(Vdss=30V/ Rds(on)=3.3mohm/ Id=75A)
Ver
International Rectifier
Power MOSFET(Vdss=100V, Rds(on)=0.052ohm, Id=20A)
Ver
International Rectifier

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